Semiconductor element

ABSTRACT

According to one embodiment, the semiconductor element includes a semi-insulating substrate which has a first first-conductivity-type layer. The semiconductor element includes a first semiconductor layer. The first semiconductor layer contains non-doped Al X Ga 1-X N (0≦X&lt;1). The semiconductor element includes a second semiconductor layer. The second semiconductor layer contains non-doped or second-conductivity-type Al Y Ga 1-Y N (O&lt;Y≦1 and X&lt;Y)). The semiconductor element includes a first major electrode and a second major electrode. The semiconductor element includes a control electrode provided on the second semiconductor layer between the major electrodes. And the first first-conductivity-type layer is provided under the control electrode.

CROSS-REFERENCE TO RELATED APPLICATIONS

This application is based upon and claims the benefit of priority fromthe prior Japanese Patent Application No.2011-014279, filed on Jan. 26,2011; the entire contents of which are incorporated herein by reference.

FIELD

Embodiments described herein relate generally to a semiconductorelement.

BACKGROUND

An element using the wide-band-gap semiconductor attracts attention as acircuit element such as switching power supply and an inverter. Such anelement includes a hetero-junction field effect transistor (HFET) havinga hetero-structure of aluminum gallium nitride (AlGaN)/gallium nitride(GaN), for example, as a device easily to have a low ON-resistance. TheHFET realizes the low ON-resistance by a high mobility in ahetero-interface channel and a high electron density generated bypiezo-polarization.

However, when a high voltage is applied between a gate and a drain ofthe HFET, electric field concentration occurs at an edge part of thegate electrode. Electrons accelerated by this electric filedconcentration jump into a passivation film or an AlGaN layer. As aresult, the electrons are trapped in the passivation film or the AlGaNlayer. It is difficult to release the trapped electrons even when theHFET comes to have an ON-state and the applied voltage across the gateand the drain is reduced.

The electron trapping depletes the hetero-interface channel partially.As a result, there is a possibility that the ON-resistance is increasedin the HFET. Such a phenomenon is referred to as a current collapsephenomenon. To suppress the current collapse phenomenon realizes the lowON-resistance effectively. Furthermore, when the electrons jump into thepassivation film or the AlGaN layer, defects are generated in thepassivation film or the AlGaN layer. Thereby, the variation in HFETcharacteristics, that is, reliability deterioration is caused.

A measure to reduce the electric filed at the edge part of the gateelectrode includes employment of a field plate (FP) structure. Forexample, a substrate FP electrode is formed by way of using a conductivesubstrate as a support substrate and connecting the conductive substrateto the source electrode. However, when the substrate FP electrode isemployed, a high voltage is applied also across a semiconductor layerbetween the support substrate and the drain electrode. Accordingly, forrealizing a high breakdown voltage, it is necessary to increase thethickness of a semiconductor layer between the support substrate and thedrain electrode. Therefore, a spatial distance is increased between thesupport substrate and the gate electrode and a shield effect of thesubstrate FP electrode becomes weak. That is, in the HFET, when theelectric filed at the edge part of the gate electrode is increased,there is a possibility that the low ON-resistance and the highreliability are not obtained.

BRIEF DESCRIPTION OF THE DRAWINGS

FIGS. 1A and 1B are schematic views of a semiconductor element accordingto a first embodiment;

FIGS. 2A and 2B are schematic views of semiconductor elements accordingto the reference example and the embodiment, respectively;

FIG. 3 is a schematic cross-sectional view of a semiconductor elementaccording to a variation example of the first embodiment;

FIG. 4 is a schematic cross-sectional view of a semiconductor elementaccording to a second embodiment;

FIG. 5 is a schematic cross-sectional view of a semiconductor elementaccording to a first variation example of the second embodiment;

FIG. 6 is a schematic cross-sectional view of a semiconductor elementaccording to a second variation example of the second embodiment;

FIG. 7 is a schematic cross-sectional view of a semiconductor elementaccording to a third variation example of the second embodiment;

FIGS. 8A and 8B are schematic views of a semiconductor element accordingto a third embodiment;

FIG. 9 is a schematic plan view of semiconductor element according to avariation example of the third embodiment;

FIGS. 10A and 10B are schematic views of a semiconductor elementaccording to a fourth embodiment;

FIGS. 11A and 11B are schematic views of a semiconductor elementaccording to a fifth embodiment;

FIG. 12 is a schematic cross-sectional view of a semiconductor elementaccording to a first variation example of the fifth embodiment;

FIG. 13 is a schematic cross-sectional view of a semiconductor elementaccording to a second variation example of the fifth embodiment;

FIG. 14 is a schematic cross-sectional view of a semiconductor elementaccording to a third variation example of the fifth embodiment; and

FIG. 15 is a schematic cross-sectional view of a semiconductor elementaccording to a fourth variation example of the fifth embodiment.

DETAILED DESCRIPTION

In general, according to one embodiment, a semiconductor element isdisclosed. The semiconductor element can include a semi-insulatingsubstrate which has a first first-conductivity-type layer selectively ona surface of the semi-insulating substrate. The semiconductor elementcan include a first semiconductor layer which is provided on thesemi-insulating substrate and the first first-conductivity-type layer.The first semiconductor layer contains non-doped Al_(X)Ga_(1-X)N(0≦X<1). The semiconductor element can include a second semiconductorlayer which is provided on the first semiconductor layer. The secondsemiconductor layer contains non-doped or second-conductivity-typeAl_(Y)Ga_(1-Y)N (0<Y≦1 and X<Y)). The semiconductor element can includea first major electrode which is connected to the second semiconductorlayer. The semiconductor element can include a second major electrodewhich is connected to the second semiconductor layer. The semiconductorelement can include a control electrode which is provided on the secondsemiconductor layer between the first major electrode and the secondmajor electrode. And the first first-conductivity-type layer is providedunder the control electrode.

Hereinafter, embodiments will be described with reference to theaccompanying drawings. In the drawings shown below, like components aremarked with like reference numerals.

First Embodiment

FIGS. 1A and 1B are schematic views of a semiconductor element accordingto a first embodiment, and FIG. 1A is a schematic cross-sectional viewof the relevant part and FIG. 1B is a schematic plan view of therelevant part. FIG. 1A shows an X-X′ cross section of FIG. 1B.

The semiconductor element 1A is a HFET element. In the semiconductorelement 1A, semiconductor layers are stacked on a support substrate 10which is a semi-insulating substrate. Each of the semiconductor layersis formed by an epitaxial growth method, for example.

In the semiconductor element 1A, a p-type layer 11 of a firstfirst-conductivity-type layer is provided selectively on the surface ofthe support substrate 10. The p-type layer 11 also may be called ap-type embedded layer or a p-type doped layer. A buffer layer 12 isprovided on the support substrate 10 and the p-type layer 11. A channellayer 15 of a first semiconductor layer is provided on the buffer layer12. A barrier layer 16 of a second semiconductor layer is provided onthe channel layer 15.

A source electrode 20 of a first major electrode is connected to thebarrier layer 16. A drain electrode 21 of a second major electrode isconnected to the barrier layer 16. A gate electrode 30 of a controlelectrode is provided on the barrier layer 16 between the sourceelectrode 20 and the drain electrode 21. The p-type layer 11 is providedunder the gate electrode 30. An edge 11 e of the p-type layer 11 is notpositioned directly under the drain electrode 21. For example, in theX-X′ cross section, the edge 11 e of the p-type layer 11 on the drainelectrode 21 side is positioned directly under an edge 30 e of the gateelectrode 30 on the drain electrode 21 side.

The gate electrode 30 is connected to the barrier layer 16 with aSchottky junction. The p-type layer 11 electrically connected to thesource electrode 20 via a contact layer 40. The source electrode 20 andthe contact layer 40 are not always formed as different members fromeach other and the contact layer 40 may be included in the sourceelectrode 20 to be formed as one major electrode. This is the same inthe embodiments shown below.

Each of the source electrode 20 and the drain electrode 21 has a stripeshape in the plane of the semiconductor element 1A. The gate electrode30 has a stripe shape in the plane of the semiconductor element 1A. Thegate electrode 30 extends in the same direction as the source electrode20 and the drain electrode 21.

The support substrate 10 is a semi-insulating substrate. The material ofthe support substrate 10 contains silicon carbide (SiC), for example.

The material of the buffer layer 12 contains aluminum nitride (AlN), forexample.

The material of the channel layer 15 contains non-doped aluminum galliumnitride (Al_(x)Ga_(1-x)N (0≦X<1)), for example.

The material of the barrier layer 16 contains non-doped or n-typealuminum gallium nitride (Al_(Y)Gal_(1-Y)N (0<Y≦1 and X<Y)), forexample.

The material of the p-type layer 11 contains p-type silicon carbide(SiC), for example. The p-type layer 11 is formed by ion implantationinto the support substrate 10, for example. The impurity concentrationin the p-type layer 11 is not lower than 1×10¹⁶ (atoms/cm³), forexample. A metal layer or an n-type layer such as one which does notcause electron leak may be disposed at the p-type layer part instead ofthe p-type layer 11.

A foundation for the growth of the buffer layer 12 (i.e., supportsubstrate 10 or p-type layer 11) is required to have a high flatness andconstituent uniformity. Accordingly, in the support substrate 10, thep-type layer 11 may be provided inside the support substrate 10 and anon-doped silicon carbide layer may be exposed on the side of the bufferlayer 12. The position of the p-type layer 11 in the depth direction isadjusted by the control of ion acceleration energy in the ionimplantation.

Successively, an advantage of the semiconductor element 1A will beexplained. Before the advantage of the semiconductor element 1A isexplained, an operation of a semiconductor element 100 according to areference example will be explained.

FIGS. 2A and 2B are schematic views of semiconductor elements accordingto the reference example and the embodiment, respectively. FIG. 2A showsa cross section of the relevant part of the semiconductor elementaccording to the reference example, and FIG. 2B shows a cross section ofthe relevant part of the semiconductor element according to theembodiment.

The p-type layer 11 or the contact layer 40 is not provided in thesemiconductor element 100 shown in FIG. 2A.

When a high voltage is applied between a source electrode 20 and a drainelectrode 21 of the semiconductor element 100, a high electric field isgenerated also between a gate electrode 30 and the drain electrode 21.Thereby, an electric field is concentrated at an edge part of the gateelectrode 30. For example, the drawing illustrates a plurality ofelectric force lines 100 e directed from the drain electrode 21 to theedge 30 e of the gate electrode 30. The edge part of the gate electrode30 indicates the edge 30 e or a part near this edge 30 e.

Electrons are accelerated by this high electric field in ahetero-interface channel between a barrier layer 16 and a channel layer15. Then, the electrons are trapped by crystal defects on the surface ofthe barrier layer 16, in the barrier layer 16, and in the channel layer15. Thereby, the current collapse phenomenon easily occurs in thesemiconductor element 100.

In the semiconductor element 100, since the high energy electrons jumpinto an insulating film (not shown in the drawing) provided on thebarrier layer 16, insulation deterioration of the insulating film iscaused easily. Furthermore, since the high energy electrons jump intothe barrier layer 16 and the channel layer 15, there is a possibilitythat a new crystal defect is generated in the barrier layer 16 and thechannel layer 15. Thereby, the reliability of the semiconductor element100 is deteriorated.

In contrast, in the semiconductor element 1A shown in FIG. 2B, thep-type layer 11 is provided selectively on the surface of the supportsubstrate 10 under the gate electrode 30. When a high voltage is appliedbetween the source electrode 20 and the drain electrode 21 of thesemiconductor element 1A in such a state, an electric field isconcentrated also at an edge part of the p-type layer 11 on the side ofthe drain electrode 21 not limited to the edge part of the gateelectrode 30 near the drain electrode 21. For, example, the drawingillustrates a plurality of electric force lines le directed from thedrain electrode 21 to the edge 30 e of the gate electrode 30 or the edge11 e of the p-type layer 11. The edge part of the p-type layer 11indicates the edge 11 e or a part near this edge 11 e.

That is, when the high electric field is applied between the sourceelectrode 20 and the drain electrode 21, the electric field is dispersedby the edge part of the gate electrode 30 and the edge part of thep-type layer 11. Furthermore, since the support substrate 10 is asemi-insulating substrate, the electric field from the drain electrode21 can be dispersed into the support substrate 10. Thereby, in thesemiconductor element 1A, the electric field near the hetero-interfaceis suppressed as compared with the semiconductor element 100. As aresult, the electron acceleration is slowed down in the semiconductorelement 1A as compared with the semiconductor element 100. That is, inthe semiconductor element 1A, the current collapse phenomenon does notoccur easily as compared with the semiconductor element 100.

Furthermore, in the semiconductor element 1A, the electrons do not jumpeasily into the insulating film provided on the barrier layer 16, thebarrier layer 16, and the channel layer as compared with thesemiconductor element 100. Accordingly, the semiconductor element 1A hasa higher reliability than the semiconductor element 100.

In the semiconductor element 1A, the electric field concentration can bereduced at the edge part of the gate electrode 30 by way of using aconductive substrate as the support substrate 10 and connecting thisconductive substrate to the source electrode 20 (field plate effect (FPeffect)). The current collapse phenomenon is suppressed by such astructure.

However, in such a structure, a high voltage is applied between theconductive substrate and the drain electrode 21 which face each other.Therefore, it is necessary to increase the thickness of the channellayer 15 and the like for obtaining a high breakdown voltage. As thechannel layer 15 is made thicker, the distance between the supportsubstrate 10 and the gate electrode 30 is increased and the field plateeffect is reduced. Furthermore, when the semiconductor layer such as thechannel layer 15 and the like has a larger thickness, the semiconductorelement 100 is bended and invites cost increase.

In contrast, when an insulating substrate is used as the supportsubstrate 10, the electric field concentration is not reduced at theedge part of the gate electrode 30 and there is a possibility that thecurrent collapse phenomenon occurs easily, while the high breakdownvoltage is maintained. That is, there arises a trade-off when theconductive substrate or the insulating substrate is used as the supportsubstrate 10.

In the semiconductor element 1A according to the embodiment, thistrade-off can be dissolved through the use of the semi-insulatingsupport substrate 10 provided with the p-type layer 11.

That is, in the semiconductor element 1A, the p-type layer 11 is formedon the surface of the support substrate 10. Therefore, the highbreakdown voltage can be maintained without the thickness increase in atleast any one of the buffer layer 12, the channel layer 15, and thebarrier layer 16. Furthermore, it is not necessary to increase thethickness in at least any one of the buffer layer 12, the channel layer15, and the barrier layer 16. As a result, the distance between atwo-dimensional electron gas channel and the support substrate 10 isreduced and thermal resistance is also reduced. Thereby, the temperaturerise of the element becomes difficult to occur. As a result, thesemiconductor element 1A easily realizes a high current operation and ahigh temperature operation.

Furthermore, since the p-type layer 11 is electrically connected to thesource electrode 20, holes generated at the time of avalanche breakdowncan be ejected to the source electrode 20 via the p-type layer 11.Thereby, the semiconductor element 1A can realize a high avalanchewithstand capability.

Variation Example of the First Embodiment

FIG. 3 is a schematic cross-sectional view of a semiconductor elementaccording to a variation example of the first embodiment.

In the semiconductor element 1B, the p-type layer 11 extends from thegate electrode 30 to the drain electrode 21 side. In the semiconductorelement 1B, the edge 11 e of the p-type layer 11 on the drain electrode21 side is positioned between the gate electrode 30 and the drainelectrode 21 when viewed in the direction perpendicular to a majorsurface of the support substrate 10. That is, the edge 11 e of thep-type layer 11 in the semiconductor element 1B is positioned closer tothe drain electrode 21 side than the edge 11 e of the p-type layer 11 inthe semiconductor element 1A.

In such a structure, when a high voltage is applied between the sourceelectrode 20 and the drain electrode 21, the electric field isconcentrated preferentially at the edge part of the p-type layer 11.Thereby, in the semiconductor element 1B, the electric fieldconcentration at the edge part of the gate electrode 30 is furtherreduced as compared with the semiconductor element 1A. As a result, inthe semiconductor element 1B, the current collapse is further suppressedas compared with the semiconductor element 1A.

The p-type layer 11 is positioned between the support substrate 10 andthe buffer layer 12, and thus the electric field is stronger within thesemiconductor layer than on the element surface. As a result, theavalanche breakdown does not occur easily on the element surface and ahigher avalanche withstand capability and reliability are obtained.

Second Embodiment

FIG. 4 is a schematic cross-sectional view of semiconductor elementaccording to a second embodiment.

In the semiconductor element 2A, a passivation film 31 of a firstinsulating film is provided on the barrier layer 16 except the gateelectrode 30, the source electrode 20, and the drain electrode 21. Thematerial of the passivation film 31 is silicon oxide (SiO₂), siliconnitride (Si₃N₄), or the like, for example.

A gate field plate electrode 50 of a first field plate electrode isprovided on the passivation film 31. The gate field plate electrode 50is electrically connected to the gate electrode 30. The gate field plateelectrode 50 extends to the drain electrode 21 side on the passivationfilm 31. The edge 11 e of the p-type layer 11 on the drain electrode 21side is positioned directly under the edge 30 e of the gate electrode 30on the drain electrode 21 side.

In such a structure, when a high voltage is applied between the sourceelectrode 20 and the drain electrode 21, the electric field isconcentrated also at an edge 50 e of the gate field plate electrode 50.As a result, in the semiconductor element 2A, the electric fieldconcentration at the edge part of the gate electrode 30 is furtherreduced as compared with the semiconductor element 1A. Accordingly, inthe semiconductor element 2A, ON-resistance increase due to the currentcollapse and the reliability deterioration are further suppressed ascompared with the semiconductor element 1A.

First Variation Example of the Second Embodiment

FIG. 5 is a schematic cross-sectional view of a semiconductor elementaccording to a first variation example of the second embodiment.

In the semiconductor element 2B, the passivation film 31 is provided onthe barrier layer 16. The gate field plate electrode 50 is provided onthe passivation film 31. The gate field plate electrode 50 iselectrically connected to the gate electrode 30. The gate field plateelectrode 50 extends to the drain electrode 21 side on the passivationfilm 31.

Furthermore, the edge 11 e of the p-type layer on the drain electrode 21side is positioned between the gate field plate electrode 50 and thedrain electrode 21 when viewed in the direction perpendicular to themajor surface of the support substrate 10. That is, the edge 11 e of thep-type layer 11 in the semiconductor element 2B is positioned closer tothe drain electrode 21 side than the edge 11 e of the p-type layer 11 inthe semiconductor element 2A.

In such a structure, when a high voltage is applied between the sourceelectrode 20 and the drain electrode 21, the electric field isconcentrated preferentially at the edge part of the p-type layer 11.Thereby, in the semiconductor element 2B, the electric field at the edgepart of the gate electrode 30 is further reduced as compared with thesemiconductor element 2A. As a result, in the semiconductor element 2B,the current collapse is further suppressed as compared with thesemiconductor device 2A.

Since the p-type layer 11 is positioned between the support substrate 10and the buffer layer 12, the electric filed is stronger within thesemiconductor layer than on the surface of the element surface. As aresult, the avalanche breakdown does not occur easily on the elementsurface, and a higher avalanche withstand capability and reliability areobtained.

Second Variation Example of the Second Embodiment

FIG. 6 is a schematic cross-sectional view of a semiconductor elementaccording to a second variation example of the second embodiment.

In the semiconductor element 2C, a passivation film 32 covering the gatefield plate electrode 50 is provided on the barrier layer 16. Thepassivation film 32 is a second insulating film in the embodiment. Thematerial of the passivation film 32 is silicon oxide (SiO₂), siliconnitride (Si₃N₄), or the like, for example.

A source field plate electrode 51 is provided on the gate field plateelectrode 50 via the passivation film 32. The source field plateelectrode 51 is a second field plate electrode in the embodiment. Thesource field plate electrode 51 is electrically connected to the sourceelectrode 20. The source field plate electrode 51 extends from thesource electrode 20 to the drain electrode 21 side. An edge 51 e of thesource field plate electrode 51 is positioned further closer to thedrain electrode 21 than the edge 50 e of the gate field plate electrode50. The edge 11 e of the p-type layer 11 on the side of the drainelectrode 21 is positioned directly under the edge 30 e of the gateelectrode 30 on the side of the drain electrode 21.

In such a structure, when a high voltage is applied between the sourceelectrode 20 and the drain electrode 21, the electric field isconcentrated also at the edge 51 e of the source field plate electrode51. As a result, in the semiconductor element 2C, the electric fieldconcentration at the edge part of the gate electrode 30 is furthersuppressed as compared with the semiconductor element 2A. Accordingly,in the semiconductor element 2C, the ON-resistance increase due to thecurrent collapse and the reliability deterioration are furthersuppressed as compared with the semiconductor element 2A.

Third Variation Example of the Second Embodiment

FIG. 7 is a schematic cross-sectional view of a semiconductor elementaccording to a third variation example of the second embodiment.

In the semiconductor element 2D, the source field plate electrode 51 isprovided on the gate field plate electrode 50 via the passivation film32.

The edge 11 e of the p-type layer 11 on the drain electrode 21 side ispositioned between the source field plate electrode 51 and the drainelectrode 21 when viewed in the direction perpendicular to the majorsurface of the support substrate 10. That is, the edge 11 e of thep-type layer 11 in the semiconductor element 2D is positioned closer tothe drain electrode 21 than the edge 11 e of the p-type layer 11 in thesemiconductor element 2C.

In such a structure, when a high voltage is applied between the sourceelectrode 20 and the drain electrode 21, the electric field isconcentrated preferentially at the edge part of the p-type layer 11 ascompared with the semiconductor element 2C. Therefore, in thesemiconductor element 2D, the electric field at the edge part of thegate electrode 30 is further reduced as compared with the semiconductorelement 2C. As a result, in the semiconductor element 2D, the currentcollapse is further suppressed as compared with the semiconductorelement 2C.

Since the p-type layer 11 is positioned between the support substrate 10and the buffer layer 12, the electric field is stronger within thesemiconductor layer than on the element surface. As a result, theavalanche breakdown does not occur easily on the element surface, and ahigher avalanche withstand capability and reliability are obtained.

Third Embodiment

FIGS. 8A and 8B are schematic views of a semiconductor element accordingto a third embodiment, and FIG. 8A is a schematic cross-sectional viewof the relevant part and FIG. 8B is a schematic plan view of therelevant part.

In the semiconductor element 3A, the p-type later 11 has a comb shapewhen viewed in the direction perpendicular to the major surface of thesupport substrate 10 (refer to FIG. 8B). At least one of concave parts11 c directed from the drain electrode 21 side toward the sourceelectrode 20 side is provided at the edge part 11 a of the p-type layer11 on the drain 21 side. For example, the p-type layer 11 has a convexpart 11 t and the concave part 11 c when viewed in the directionperpendicular to the major surface of the support substrate 10. A planarshape of the convex part 11 t (or concave part 11 c) is rectangular. Theconvex parts 11 t (or concave parts 11 c) are disposed periodically in adirection approximately perpendicular to the direction from the sourceelectrode 20 to the drain electrode 21.

Therefore, the positions of the electric field concentration aredispersed the same as in the case of providing a plurality of fieldplate electrodes and the case of changing the length of the field plateelectrode. For example, when a high voltage is applied between thesource electrode 20 and the drain electrode 21, the electric field isdispersed into a plurality of corners 11 b each formed by the convexpart 11 t and the concave part 11 c. Furthermore, the positions of theelectric field concentration are dispersed also when the convex part 11t of the p-type layer 11 is positioned near to the drain electrode 21,and thus the semiconductor element 3A maintains a high breakdownvoltage. As a result, in the semiconductor element 3A, the ON-resistanceincrease due to the current collapse and the reliability deteriorationare suppressed even when the element surface does not have the fieldplate structure.

Variation Example of the Third Embodiment

FIG. 9 is a schematic plan view of a semiconductor element according toa variation example of the third embodiment.

In the semiconductor element 3B, a planer shape of the convex part 11 t(or concave part 11 c) is trapezoidal when viewed in the directionperpendicular to the surface of the support substrate 10. Also in such aplaner shape, an advantage similar to that of the semiconductor element3A is obtained.

Each of the HFET elements explained above is provided with a gateelectrode through the use of the Schottky junction. This structure has astructure similar to a lateral-type Schottky barrier diode (SBD) betweenthe gate and the drain. Accordingly, the HFET element of the embodimentcan be diverted to the lateral-type SBD and this lateral type SBD has alow on-voltage and a high reliability.

Fourth Embodiment

FIGS. 10A and 10B are schematic views of a semiconductor elementaccording to a fourth embodiment, and FIG. 10A is a schematiccross-sectional view of the relevant part and FIG. 10B is a schematicplan view of the relevant part. FIG. 10A shows an X-X′ cross section ofFIG. 10B.

The semiconductor element 4 has an insulating gate structure. In thesemiconductor element 4, a gate insulating film 35 is provided on thebarrier layer 16. The material of the gate insulating film 35 is siliconoxide (SiO₂), silicon nitride (Si₃N₄), or the like, for example. Thegate electrode 30 is provided on the gate insulating film 35 between thesource electrode 20 and the drain electrode 21. The other configurationis the same as that of the semiconductor element 1A. A similar advantageto that of the semiconductor element 1A is obtained also in such asemiconductor element 4.

Fifth Embodiment

FIGS. 11A and 11B are schematic views of a semiconductor elementaccording to a fifth embodiment, and FIG. 11A is a schematiccross-sectional view of the relevant part and FIG. 11B is a schematicplan view of the relevant part. FIG. 11A shows an X-X′ cross section ofFIG. 11B.

The semiconductor element 5A uses a Si substrate 17 as the supportsubstrate. A major component of the Si substrate is silicon (Si).Preferably, in the Si substrate 17, a low-concentration layer 18 has adoping concentration not higher than 1×10¹⁴ cm⁻³ in order to have a highresistance. While the conduction type of the low-concentration layer 18is a p-type as an example, the conductivity type may be an n-type.

The p-type layer 11 is provided on the surface of the Si substrate 17,and the p-type layer 11 is electrically connected to the sourceelectrode 20. An n-type layer 19 is provided on a major surface (secondmajor surface) opposite to the major surface (first major surface) ofthe Si substrate 17 where the p-type layer 11 is provided. Furthermore,the n-type layer 19 is connected with a rear-side electrode 25. Then-type layer 19 is connected to the drain electrode 21 via the rear-sideelectrode.

Silicon (Si) has a smaller critical electric field than gallium nitride(GaN). Therefore, when a high voltage is applied, the avalanchebreakdown occurs easily in the p-type layer 11, the low-concentrationlayer 18, and the n-type layer 19 within the silicon substrate 17.

Accordingly, in the semiconductor element 5A, a high breakdown voltageis realized by way of increasing the distance between the p-type layer11 and the drain electrode 21. Moreover, the thickness of the channellayer 15 can be reduced. Then, the avalanche breakdown is positivelycaused to occur within the Si substrate 17 and thus the avalanchebreakdown does not occur easily in the channel layer 15

Furthermore, the p-type layer 11 is electrically connected to the sourceelectrode 20 and the n-type layer 19 is electrically connected to thedrain electrode via the rear-side electrode 25. Thereby, a large numberof holes and electrons are generated only within the Si substrate 17 andthe carriers are ejected quickly to the source electrode 20 and thedrain electrode 21. Accordingly, a high avalanche withstand capabilitycan be realized in the semiconductor element 5A.

Furthermore, the end 11 e of the p-type layer 11 may be positionedcloser to the drain electrode 21 side than the edge 30 e of the gateelectrode 30. Thereby, the electric field concentration is positivelycaused at the edge 11 e of the p-type layer 11 and the avalanchebreakdown occurs surely within the Si substrate 17. At the same time,the electric field concentration is suppressed at the edge 30 e of thegate electrode 30 and the current collapse is suppressed in thesemiconductor element 5A.

First Variation Example of the Fifth Embodiment

FIG. 12 is a schematic cross-sectional view of a semiconductor elementaccording to a first variation example of the fifth embodiment.

In the semiconductor element 5B, a low-concentration p-type layer 60 isprovided on the surface of the Si substrate 17 between the neighboringp-type layers 11. In other words, in addition to the p-type layer 11,another p-type layer 11 is provided on the surface of the Si substrate17, and the p-type layer 60 is provided on the surface of the Sisubstrate 17 in a part sandwiched by the p-type layer 11 and the anotherp-type layer 11. The low-concentration p-type layer 60 is depleted bythe application of a high voltage. Thereby, the electric fieldconcentration is suppressed at the edge 11 e of the p-type layer 11.Accordingly, a high breakdown voltage is obtained in the semiconductorelement 5B even when the distance between the p-type layer 11 and thedrain electrode 21 is reduced. That is, the trade-off whether thebreakdown voltage improvement or the ON-resistance reduction is relaxedin the semiconductor element 5B and a low ON-resistance is obtained atthe same breakdown voltage.

Second Variation Example of the Fifth Embodiment

FIG. 13 is a schematic cross-sectional view of a semiconductor elementaccording to a second variation example of the fifth embodiment.

In the semiconductor element 5C, a plurality of p-type layers 61 areprovided selectively on the surface of the Si substrate 17 between theneighboring p-type layers 11. In other words, in addition to the p-typelayer 11, another p-type layer 11 is provided on the surface of the Sisubstrate 17, and the plurality of p-type layers 61 are provided on thesurface of the Si substrate 17 in a part sandwiched by the p-type layer11 and the another p-type layer 11. Thereby, the electric field 1concentration is suppressed at the edge 11 e of the p-type layer and ahigh breakdown voltage is obtained in the semiconductor element 5C. Thatis, the trade-off whether the breakdown voltage improvement or theON-resistance reduction is relaxed in the semiconductor element 5C and alow ON-resistance is obtained at the same breakdown voltage.

The above described advantage is obtained also when the impurityconcentration in the p-type layer 61 is the same as the impurityconcentration in the p-type layer 11. Accordingly, the p-type layer 11and the p-type layer 61 can be formed in the same manufacturing process.The number of the p-type layers 61 may be plural or singular.

That is, in FIG. 12 or 13, at least one of p-type layers (e.g., p-typelayer 60 or p-type layer 61) is provided between the neighboring p-typelayers 11. The p-type layer provided between the neighboring p-typelayers is referred to as a second first-conductivity-type layer.

Third Variation Example of the Fifth Embodiment

FIG. 14 is a schematic cross-sectional view of a semiconductor elementaccording to a third variation example of the fifth embodiment.

In the semiconductor element 5D, when a region, where the sourceelectrode 20, the gate electrode 30, and the drain electrode 21 areprovided, is defined as a element region (e.g., region from the sourceelectrode 20 to the drain electrode 21), a p-type guard ring layer 62 isprovided selectively on the surface of the Si substrate 17 in the outerperiphery of the element region. That is, at least one of p-type guardring layers 62, which is a third first-conductivity-type layer, isprovided on the surface of the Si substrate 17 except a region where thep-type layer 11 or the p-type layer 61 is provided. Thereby, in thesemiconductor element 5D, the avalanche breakdown is suppressed in theelement outer peripheral, and a high breakdown voltage and a highavalanche withstand capability are realized.

The p-type guard ring layer 62 and the p-type layer 61 can be formed inthe same manufacturing process as the p-type layer 11. Furthermore,preferably the spacing between the p-type guard ring layers 62 issmaller than the spacing between the p-type layers 11 and the spacingbetween the p-type layer 11 and the p-type layer 61 for preventing abreakdown voltage reduction in the element region outer peripheral.

Furthermore, the barrier layer 16 is not provided on the p-type guardring layer 62. That is, in a part of the outer peripheral of the elementregion, the barrier layer 16 is not provided for preventing thegeneration of the two-dimensional electron gas.

Fourth Variation Example of the Fifth Embodiment

FIG. 15 is a schematic cross-sectional view of a semiconductor elementaccording to a fourth variation example of the fifth embodiment.

In the semiconductor element 5E, an element separation layer 70 isprovided in the element outer peripheral region where the p-type guardring layer 62 is provided. The element separation layer 70 is providedon the channel layer 15 on the p-type guard ring layer 62. The elementseparation layer 70 digs into a part of the surface of the channel layer15. That is, the barrier layer 16 is not provided in a part of theelement outer peripheral region for preventing the generation of thetwo-dimensional electron gas.

The element separation layer 70 can be formed by way of ion-implantingnitrogen, oxygen, boron, iron, or the like, for example. Furthermore,since the buffer layer 12 and the channel layer 15 are formed on thep-type guard ring layer 62, the surface of the Si substrate 17 is notexposed and the semiconductor element 5E obtains a high reliability.

Hereinabove, the embodiments are not limited to the above describedexamples and can be practiced by various modifications in a rangewithout departing from the purport of the embodiments. For example,while AlGaN layer/GaN layer are illustrated as a combination of thebarrier layer/the channel layer, the embodiments can be practiced alsoby GaN layer/InGaN layer, AlN layer/AlGaN layer, InAlN layer/GaN layer,or the like.

Furthermore, the embodiments can be practiced also when the gatestructure is changed to a recess gate structure or the like, other thanthe Schottky gate electrode and the insulating gate structure. In theembodiments, the semiconductor conductivity type may be described as thep-type is the first-conductivity-type and the n-type is thesecond-conductivity-type.

In the description, “nitride semiconductor” is defined to include allthe semiconductors having respective compositions which are obtained bychanging composition ratios x, y, and z within respective ranges in achemical formula B_(x)In_(y)Al_(z)Ga_(1-x-y)N (0≦x≦1, 0≦y≦1, 0≦z≦1,x+y+z≦1). In addition, “nitride semiconductor” is defined to include asemiconductor further containing a V-group element except N (nitrogen)in the above chemical formula, a semiconductor further containingvarious kinds of element added for controlling various kinds of materialproperty such as a conductivity type, and a semiconductor furthercontaining various kinds of element which are not containedintentionally.

Hereinabove, the embodiments of the invention have been explained withreference to the specific examples. However, the invention is notlimited to these specific examples. That is, any embodiments in whichone skilled in the art adds a design change optionally to these specificexamples are included within the scope of the invention to the extentthat the feature of the invention is provided. Each element with whicheach of the above-described specific examples is provided and thearrangement, material, condition, shape, size and the like thereof arenot limited to those of the illustrations and can be changed optionally.

Furthermore, the respective elements of the above described embodimentscan be combined with one another to the extent of technical capability,and embodiments combining these elements are included within the scopeof the invention to the extent that the feature of the invention isincluded.

Moreover, one skilled in the art would be able to arrive at variouskinds of variation example and modification example in the scope of thephilosophy of the invention and these variation examples and themodification examples are understood to be included within the scope ofthe invention.

While certain embodiments have been described, these embodiments havebeen presented by way of example only, and are not intended to limit thescope of the inventions. Indeed, the novel embodiments described hereinmay be embodied in a variety of other forms; furthermore, variousomissions, substitutions and changes in the form of the embodimentsdescribed herein may be made without departing from the spirit of theinventions. The accompanying claims and their equivalents are intendedto cover such forms or modification as would fall within the scope andspirit of the inventions.

1.-20. (canceled)
 21. A semiconductor element, comprising: asemi-insulating substrate having a first first-conductivity-type layerselectively on a surface of the semi-insulating substrate; a firstsemiconductor layer provided on the semi-insulating substrate and thefirst first-conductivity-type layer, the first semiconductor layercontaining Al_(x)Ga_(1-x)N (0≦X<1); a second semiconductor layerprovided on the first semiconductor layer, the second semiconductorlayer containing Al_(Y)Ga_(1-Y)N (0<Y≦1 and X<Y)), and conductivity-typeof Al_(Y)Ga_(1-y)N (0<Y≦1 and X<Y)) not being first-conductivity-type; afirst major electrode connected to the second semiconductor layer; asecond major electrode connected to the second semiconductor layer; anda control electrode provided on the second semiconductor layer betweenthe first major electrode and the second major electrode, wherein thefirst first-conductivity-type layer is provided under the controlelectrode.
 22. The element according to claim 21, wherein a first edgeof the first first-conductivity-type layer on a side of the second majorelectrode is positioned between the control electrode and the secondmajor electrode, when viewed in a direction perpendicular to a majorsurface of the semi-insulating substrate.
 23. The element according toclaim 21, further comprising: a first insulating film provided on thesecond semiconductor layer except the control electrode, the first majorelectrode, and the second major electrode; and a first field plateelectrode provided on the first insulating film, wherein the first fieldplate electrode is connected to the control electrode, and a first edgeof the first first-conductivity-type layer on the side of the secondmajor electrode is positioned between the first field plate electrodeand the second major electrode, when viewed in a direction perpendicularto a major surface of the semi-insulating substrate.
 24. The elementaccording to claim 21, further comprising: a first insulating filmprovided on the second semiconductor layer except the control electrode,the first major electrode, and the second major electrode; and a firstfield plate electrode provided on the first insulating film, a secondinsulating film covering the first field plate electrode; and a secondfield plate electrode provided on the second insulating film, whereinthe first field plate electrode is connected to the control electrode,the second field plate electrode is connected to the first majorelectrode, and a first edge of the first first-conductivity-type layeron the side of the second major electrode is positioned between thesecond field plate electrode and the second major electrode, when viewedin a direction perpendicular to a major surface of the semi-insulatingsubstrate.
 25. The element according to claim 21, wherein at least oneof convex parts directed from a side of the second major electrode to aside of the first major electrode is provided at an edge part of thefirst first-conductivity-type layer on the side of the second majorelectrode, when viewed in a direction perpendicular to a major surfaceof the semi-insulating substrate.
 26. The element according to claim 21,further comprising a gate insulating film provided between the secondsemiconductor layer and the control electrode.
 27. The element accordingto claim 21, wherein the semi-insulating substrate is made of silicon.28. The element according to claim 27, wherein another firstfirst-conductivity-type layer is provided on the surface of thesemi-insulating substrate other than the first first-conductivity-typelayer, and at least one of second first-conductivity-type layers isprovided selectively on the surface of the semi-insulating substrate ina part sandwiched by the first first-conductivity-type layer and theanother first first-conductivity-type layer.
 29. The element accordingto claim 28, wherein an impurity concentration in the secondfirst-conductivity-type layer is lower than an impurity concentration inthe first first-conductivity-type layer.
 30. The element according toclaim 27, wherein a second-conductivity-type layer is provided on asecond major surface opposite to a first major surface of thesemi-insulating substrate, the first first-conductivity-type layer isprovided on the first major surface of the semi-insulating substrate,and the second-conductivity-type layer is electrically connected to thesecond major electrode.
 31. The element according to claim 28, whereinat least one of third first-conductivity-type layers is providedselectively on the surface of the semi-insulating substrate except aregion, and the first first-conductivity-type layer or the secondfirst-conductivity-type layers is provided in the region.
 32. Theelement according to claim 31, wherein the second semiconductor layer isnot provided on the at least one of third first-conductivity-typelayers.
 33. The element according to claim 31, wherein a deviceseparation layer is provided on the first semiconductor layer on the atleast one of third first-conductivity-type layers.